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We perform density functional theory calculations for the determination ofthe structural and electronic properties of epitaxial graphene on4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physicalstresses we show that, in contrast with Si-face epitaxial films, the firstgraphene layer that forms on the C-face of SiC is purely metallic with its$\pi$-bands partially preserved. Typical free-standing characteristics arefully recovered with a second graphene layer. We moreover discuss on themagnetic properties of the interface and the absence of Fermi-level pinningeffects that could allow for a plausible device operation starting from theoff-state.

Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)