English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

The complex refractive index of SiGe alloys at 632.8 nm has been measured as a function of the Ge concentration using in situ ellipsometry while the material is slowly removed from a silicon substrate using reactive‐ion etching (RIE). Homogeneous, strained epitaxial SiGe films on silicon substrates were used. The Ge concentration was obtained by Rutherford backscattering. If an unknown SiGe structure is etched with RIE, in situ ellipsometry yields combinations of the ellipsometric angles Ψ and Δ with time. Starting at the Si substrate, these points are, on a point‐to‐point basis, converted into combinations of complex refractive index and depth in a numerical procedure. For this inversion of the ellipsometry equations, the known relation between the real and the imaginary part of the refractive index of SiGe is used. Finally the refractive indices are converted into Ge concentrations. Thus the depth profile of the Ge concentration in an unknown epitaxial SiGe structure can be inferred from an in situ elli...

Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive-ion etching