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Recent studies on nanoscale field-effect sensors reveal the crucialimportance of the low frequency noise for determining the ultimate detectionlimit. In this letter, the 1/f-type noise of Si nanoribbon field-effect sensorsis investigated. We demonstrate that the signal-to-noise ratio can be increasedby almost two orders of magnitude if the nanoribbon is operated in an optimalgate voltage range. In this case, the additional noise contribution from thecontact regions is minimized, and an accuracy of 0.5% of a pH shift in one Hzbandwidth can be reached.

Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors