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Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlomethod. Simulated growth is conducted in N-rich conditions, hence it iscontrolled by Ga atoms surface diffusion. It is shown that dominating four-bodyinteractions of Ga atoms can cause step flow anisotropy. Kinetic Monte Carlosimulations show that parallel steps with periodic boundary conditions formdouble terrace structures, whereas initially V -shaped parallel step traininitially bends and then every second step moves forward, building regular,stationary ordering as observed during MOVPE or HVPE growth of GaN layers.These two phenomena recover surface meandered pair step pattern observed, since1953, on many semiconductor surfaces, such as SiC, Si or GaN. Change of terracewidth or step orientation particle diffusion jump barriers leads either to stepmeandering or surface roughening. Additionally it is shown that step behaviorchanges with the Schwoebel barrier height. Furthermore, simulations underconditions corresponding to very high external particle flux result intriangular islands grown at the terraces. All structures, emerging in thesimulations, have their corresponding cases in the experimental results.

Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions