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We demonstrate the control of the hole concentration in Ga1-xMnxP over a widerange by introducing compensating vacancies. The resulting evolution of theCurie temperature from 51 K to 7.5 K is remarkably similar to that observed inGa1-xMnxAs despite the dramatically different character of hole transportbetween the two material systems. The highly localized nature of holes inGa1-xMnxP is reflected in the accompanying increase in resistivity by manyorders of magnitude. Based on variable-temperature resistivity data we presenta general picture for hole conduction in which variable-range hopping is thedominant transport mechanism in the presence of compensation.

Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP