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To study spin flipping within the antiferromagnet IrMn, we extended priorCurrent-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies ofPy-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMnlayers-5 nm less than or equal to t(IrMn) less than or equal to 30 nm.Unexpectedly, A{\Delta}R = A[R(AP) - R(P)]--the difference in specificresistance between the anti-parallel (AP) and parallel (P) magnetic states ofthe two Py layers-did not decrease with increasing t(IrMn), for t(IrMn) greaterthan 5 nm, but rather became constant to within our measuring uncertainty. Thisconstant looks to be due mostly to a new, small MR in thin Py layers. Theconstant complicates isolating the spin-diffusion length, lsf(IrMn), in bulkIrMn, but lsf(IrMn) is probably short, less than or equal to 1 nm. Similarresults were found with FeMn.

A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves