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The impact of oxygen vacancies on local tunneling properties acrossrf-sputtered MgO thin films was investigated by optical absorption spectroscopyand conducting atomic force microscopy. Adding O$_2$ to the Ar plasma duringMgO growth alters the oxygen defect populations, leading to improved localtunneling characteristics such as a lower density of current hotspots and alower tunnel current amplitude. We discuss a defect-based potential landscapeacross ultrathin MgO barriers.

Control of defect-mediated tunneling barrier heights in ultrathin MgO films