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We present the use of direct bonded copper (DBC) for the straightforwardfabrication of high power atom chips. Atom chips using DBC have severalbenefits: excellent copper/substrate adhesion, high purity, thick (> 100microns) copper layers, high substrate thermal conductivity, high aspect ratiowires, the potential for rapid (< 8 hr) fabrication, and three dimensional atomchip structures. Two mask options for DBC atom chip fabrication are presented,as well as two methods for etching wire patterns into the copper layer. Thewire aspect ratio that optimizes the magnetic field gradient as a function ofpower dissipation is determined to be 0.84:1 (height:width). The optimal wirethickness as a function of magnetic trapping height is also determined. A testchip, able to support 100 A of current for 2 s without failing, is used todetermine the thermal impedance of the DBC. An assembly using two DBC atomchips to provide magnetic confinement is also shown.

Atom chips on direct bonded copper substrates