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Negatively charged Nitrogen-Vacancy (NV$^-$) centers in diamond produced byion implantation often show properties different from NVs created during thecrystal growth. We observe that NVs created from nitrogen ions with fourdifferent energies (30-300 keV) show much shorter electron spin coherence time$T_2$ compared to the "natural" NVs and we could find any dependence of $T_2$on the implantation energy. Moreover, we also find out that about 10% of themshow switching from NV$^-$to NV$^0$. We develop a method to increase $T_2$ ofsingle NV$^-$ centers by annealing the sample at $t=1200 {\circ}$C whereas atthe same time the fraction of the NVs showing discharging is greatly reduced.

Increasing the coherence time of single electron spins in diamond by high temperature annealing