English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

The effects of n-type doping on the air-stability of vacuum-processed n-channel organic transistors have been investigated using perylene diimides and pyronin B as the active layer and dopant, respectively. Systematic studies on the influence of doping location revealed the n-type doping of bulk active layer or channel region significantly improves air-stability by compensating for the trapped electrons with the donated mobile electrons. Although n-type doping at the electrode contact could readily turn on the devices, it could not confer air-stable electron transport. The described approach would open up opportunities to enable and improve the stability of n-channel organic transistors in air.open23

Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors