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InAs/GaAs quantum dot (QD) heterostructures grown by molecular beam epitaxy are studied using cross-sectional scanning tunneling microscopy and spectroscopy. The images reveal individual InAs QDs having a lens shape with maximum base diameter of 10.5 nm and height of 2.9 nm. Analysis of strain relaxation of the QDs reveals an indium composition varying from 65% at the base of the QD, to 95% at its center, and back to 65% at its apex. Room-temperature tunneling spectra acquired 3–4 nm from the center of a dot show a peak located in the upper part of the GaAs band gap originating from the lowest electron confined state of the QD, along with a tail in the conductance extending out from the valence band and originating from QD hole states. A computational method is developed for simulating the tunneling spectra using effective-mass bands treated in an envelope function approximation. By comparison of the computations to low-current spectra, the energy of the lowest electron, and highest hole QD states are det...

Size, shape, composition, and electronic properties of InAs/GaAs quantum dots by scanning tunneling microscopy and spectroscopy