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Diamond crystallites have been nucleated and grown by hot filament chemical vapor deposition at 600Â°C on the untreated fracture surface of a cleaved Si(111) sample. The flat surface of the cleaved crystal was inactive towards diamond nucleation while, on the terraced surface formed by the propagating crack, a high density of nuclei was found. The crystallites were nucleated in correspondence of edges between (111) terrace planes and step planes. The occurrence of edges, as determined by scanning electron microscopy (SEM) observation, is a necessary but not sufficient condition for the nucleation and this fact suggests that particular atomic arrangements are required for the diamond nucleus formation

Diamond nucleation on cleaved Si(111)