English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Ohmic contacts produced by high‐energy pulsed laser beam alloying Au/Te/Au/n‐GaAs are investigated by micro Raman spectroscopy. The results are compared to those from furnace annealed ohmic contacts. For the furnace as well as for the laser annealed ohmic contacts, no evidence for a doping of the contact region is found in the Raman spectra. The presence of a highly disordered GaAs surface layer is observed for both types of contacts. In addition, after furnace processing a Ga2Te3 layer is formed. These results are consistent with earlier Mossbauer studies. For the laser alloyed samples the results strengthen the role of a defective/disordered interface structure where conduction might occur by a resonant tunneling process involving localized gap states.

A Raman study of Au/Te/Au/GaAs (100) ohmic contacts