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To clarify the electronic density of states (DOS) around the conduction bandbottom for state of the art transparent amorphous oxide semiconductors (TAOSs),InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin filmtransistors (TTFTs) and measured their gate voltage dependence of thermopower(S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptlyincreases, but then gradually decreases as Vg increases, clearly suggesting theanti-parabolic shaped DOS is hybridized with the original parabolic shaped DOSaround the conduction band bottom.

Electric field modulation of thermopower for transparent amorphous oxide thin film transistors