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The epitaxial lift‐off (ELO) technique has been combined with inverted III–V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

InGaP∕GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off