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Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) andthe gate voltage (Vg) dependence of S for thin film transistors (TFTs) based onTiO2 films were investigated to clarify the electronic density of states (DOS)around the conduction band bottom. The slope of the |S|-log n3D plots was -20{\mu}V/K, which is an order magnitude smaller than that of semiconductors (-198{\mu}V/K), and the |S| values for the TFTs increased with Vg in the low Vgregion, suggesting that the extra tail states are hybridized with the originalconduction band bottom.

Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation