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The effect of the AlOx barrier thickness on magnetic and morphologicalproperties of Ta/Co/(AlOx)/Alq3/Si hybrid structures was systematically studiedby means of atomic force microscopy, SQUID magnetometry and nuclear magneticresonance (NMR). All used techniques pointed out that the barrier thickness of2 nm is required to obtain a magnetically good cobalt layer on top of Alq3.59Co NMR measurements revealed that the AlOx barrier gives rise to theformation of an interface layer with "defective" cobalt favouring growth of"bulk" cobalt with good magnetic properties.

Interface effects on an ultrathin Co film in multilayers based on the organic semiconductor Alq3