English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

We report the fabrication and study of Hall bar MOSFET devices in which anoverlapping-gate architecture allows four-terminal measurements of low-density2D electron systems, while maintaining a high density at the ohmic contacts.Comparison with devices made using a standard single gate show thatmeasurements can be performed at much lower densities and higher channelresistances, despite a reduced peak mobility. We also observe a voltagethreshold shift which we attribute to negative oxide charge, injected duringelectron-beam lithography processing.

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime