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We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber attemperature of 400C reduces the characteristic 1/f noise in the junctions, insome cases by an order of magnitude. Both ultra high vacuum and high vacuumfabricated samples demonstrated a significant reduction in the 1/f noise level.Temperature dependence of the noise was studied between 4.2 and 340 Kelvin,with a linear dependence below 100 K, but a faster increase above. The resultsare consistent with a model where the density of charge trapping twolevel-systems within the tunneling barrier is reduced by the annealing process.

Reduction of low-frequency 1/f noise in Al-AlOx-Al tunnel junctions by thermal annealing