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We fabricated silicon metal-oxide-semiconductor field effect transistorswhere an additional sodium-doped layer was incorporated into the oxide tocreate potential fluctuations at the Si-SiO2 interface. The amplitude of thesefluctuations is controlled by both the density of ions in the oxide and theirposition relative to the Si-SiO2 interface. Owing to the high mobility of theions at room temperature, it is possible to move them with the application of asuitable electric field. We show that, in this configuration, such a device canbe used to control both the disorder and the electron-electron interactionstrength at the Si-SiO2 interface.Comment: 3 pages, 2 figure

Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors