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We show that the growth of the heterostructure LaGaO3/SrTiO3 yields theformation of a highly conductive interface. Our samples were carefully analyzedby high resolution electron microscopy, in order to assess their crystalperfection and to evaluate the abruptness of the interface. Their carrierdensity and sheet resistance are compared to the case of LaAlO3/SrTiO3 and asuperconducting transition is found. The results open the route to widening thefield of polar-non polar interfaces, pose some phenomenological constrains totheir underlying physics and highlight the chance of tailoring their propertiesfor future applications by adopting suitable polar materials.

Conducting interfaces between band insulating oxides: the LaGaO3/SrTiO3