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Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+GaAs lift-off films using a novel circularly polarized photoluminescencemicroscope. The method is equivalent to using a standard optical microscope andprovides a contactless means to measure charge (L) and spin (L_s) diffusionlengths. The measured values of L and L_s are in excellent agreement with thespatially averaged polarization and a sharp reduction in these two quantities(L from 21.3 mum to 1.2 mum and L_s from 1.3 mum to 0.8 mum) is measured withincreasing surface recombination. Outwards diffusion results in a factor of 10increase in the polarization at the excitation spot.

Imaging charge and spin diffusion of minority carriers in GaAs