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Pulsed laser deposition has been used to deposit Y1Ba2Cu3O7 layer on CeO2buffer layers on (1102) sapphire. Both layers are epitaxial with the (110)direction of the CeO2 layer aligned with the <2021> direction of the sapphiresubstrate. The c-axis Y1Ba2Cu3O7 layer has its <100> direction aligned with the<110> direction of the CeO2. Cross-sectional transmission electron microscopyshows the epitaxy to be coherent and the interfaces to be abrupt at an atomiclevel. The best films have a critical current of 9 e6 A/cm2 at 4.2 K and lowermicrowave surface resistance than copper at 77 K and at a frequency of 31 GHz.

Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substrates