English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

We propose and demonstrate the application of high-pressure water-vapor annealing (HWA) to silicon photonic crystals for surface passivation. We find that the photoluminescence intensity from a sample treated with HWA is enhanced by a factor of ∼6. We confirm that this enhancement originates from a reduction in the surface-recombination velocity (SRV) by a factor of ∼0.4. The estimated SRV is as low as 2.1×103 cm/s at room temperature. These results indicate that HWA is a promising approach for efficient surface passivation in silicon photonic nanostructures.

Reduction in surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water-vapor annealing