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The origin of defects present in a device is not always clear. Hence, in electronic device simulation, the influence of defects with more than two different charge states (multivalent defects) is often modeled as a set of defects with only two possible charge states [Shockley–Read–Hall (SRH)-like defects] which follow the SRH statistics. This paper investigates under which circumstances this procedure is allowed, and provides means to check the equivalence between the multivalent and SRH-like description in a fast and efficient way. The procedures are verified simulating a thin film solar cell structure.

Can a multivalent defect be mimicked by several Shockley–Read–Hall-like defects?