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Laser spot scanning studies of single-crystalline p-InSe in contact with a neutral aqueous solution reveal a dramatic difference in lateral resolution between the material ``as cleaved'' and after platinization by brief dipping in a dilute H2PtCl6 solution. A model is developed to explain these observations, and the resolution is calculated as a function of the diffusion coefficient and the life time of minority carriers, and of the charge transfer rate. The improvement of the resolution is found to be due to the increase of the rate of hydrogen evolution at the illuminated semiconductor by Pt catalyst. The model also provides numerical values for the charge transfer rate in the noncatalyzed and the catalyzed cases. Journal of Applied Physics is copyrighted by The American Institute of Physics

Laser spot scanning in photoelectrochemical systems, relation between spot size and spatial resolution of the photocurrent