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Superconductor/ferromagnet (S/F) proximity effect theory predicts that thesuperconducting critical temperature of the F1/F2/S or F1/S/F2 trilayers forthe parallel orientation of the F1 and F2 magnetizations is smaller than forthe antiparallel one. This suggests a possibility of a controlled switchingbetween the superconducting and normal states in the S layer. Here, using thespin switch design F1/F2/S theoretically proposed by Oh et al. [Appl. Phys.Lett. 71, 2376 (1997)], that comprises a ferromagnetic bilayer separated by anon-magnetic metallic spacer layer as a ferromagnetic component, and anordinary superconductor as the second interface component, we have successfullyrealized a full spin switch effect for the superconducting current.

Full spin switch effect for the superconducting current in a superconductor/ferromagnet thin film heterostructure