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We study the conductivity of a graphene strip taking into accountelectrostatically-induced charge accumulation on its edges. Using a localdependency of the conductivity on the carrier concentration we find that theelectrostatic size effect in doped graphene strip of the width of 0.5 - 3 $%\mu $m can result in a significant (about 40%) enhancement of the effectiveconductivity in comparison to the infinitely wide samples. This effect shouldbe taken into account both in the device simulation as well as for verificationof scattering mechanisms in graphene.

Conductivity of a graphene strip: width and gate-voltage dependencies