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We have investigated the atomically-resolved substrate and homoepitaxial thinfilm surfaces of SrTiO3(001) using low-temperature scanning tunnelingmicroscopy/spectroscopy (STM/STS) combined with pulsed laser deposition (PLD).It was found that annealing at 1000 oC in an oxygen partial pressure of 1*10-6Torr, which is a typical annealing treatment for the preparation of SrTiO3substrates, unexpectedly resulted in a disordered surface on an atomic scale.In contrast, homoepitaxial SrTiO3 thin films grown on this disordered substrateexhibited (2*2) surface reconstructions. The differential conductance spectra,dI/dV in STS measurements, revealed a number of surface defects in a10-unit-cell-thick SrTiO3 film, but much fewer in a 50-unit-cell-thick film.These results indicate that the defect density in the film strongly depends onthe film thickness, suggesting non-uniform stoichiometry along the growthdirection.

Thickness-dependent Local Surface Electronic Structures of Homoepitaxial SrTiO3 Thin Films