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We elucidate on the low mobility and charge traps of the chemically reducedgraphene oxide (RGO) sheets by measuring and analyzing temperature dependentcurrent-voltage characteristics. The RGO sheets were assembled between sourceand drain electrodes via dielectrophoresis. At low bias voltage the conductionis Ohmic while at high bias voltage and low temperatures the conduction becomesspace charge limited with an exponential distribution of traps. We estimate anaverage trap density of 1.75x10^16 cm^-3. Quantitative information about chargetraps will help develop optimization strategies of passivating defects in orderto fabricate high quality solution processed graphene devices.

Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets