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The atomic structure of Si‐SiO2 interfaces resulting from oxidation of singular {111} and vicinal (111)3°[11{0] and (111)2°[11{2] has been studied by high resolution electron microscopy. The transition from crystalline Si to amorphous SiO2 was found to be very abrupt. The structure of the interface can be described by a terrace‐ledge‐kink‐model. This structure is consistent with a ledge mechanism of silicon oxidation.

The atomic structure of Si-SiO2 interfaces suggesting a ledge mechanism of silicon oxidation