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We study the thermoelectric properties of three-dimensional topologicalAnderson insulators with line dislocations. We show that at high densities ofdislocations the thermoelectric figure of merit ZT can be dominated byone-dimensional topologically-protected conducting states channeled through thelattice screw dislocations in the topological insulator materials with anon-zero time-reversal-invariant momentum such as Bi_{1-x}Sb_x. When thechemical potential does not exceed much the mobility edge the ZT at roomtemperatures can reach large values, much higher than unity for reasonableparameters, hence making this system a strong candidate for applications inheat management of nano-devices.

Large thermoelectric figure of merit for 3D topological Anderson insulators via line dislocation engineering