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Using high temperature annealing conditions with a graphite cap covering theC-face of an 8deg off-axis 4H-SiC sample, large and homogeneous singleepitaxial graphene layers have been grown. Raman spectroscopy shows evidence ofthe almost free-standing character of these monolayer graphene sheets, whichwas confirmed by magneto-transport measurements. We find a moderate p-typedoping, high carrier mobility and half integer Quantum Hall effect typical ofhigh quality graphene samples. This opens the way to a fully compatibleintegration of graphene with SiC devices on the wafers that constitute thestandard in today's SiC industry.

Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices