English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Inspired by recent experimental realizations and theoretical simulations ofthin silicon nanowire-based devices, we perform predictive first-principlessimulations of junctionless gated Si nanowire transistors. Our primarypredictions are that Si-based transistors are physically possible without majorchanges in design philosophy at scales of ~1 nm wire diameter and ~3 nm gatelength, and that the junctionless transistor may be the only physicallysensible design at these length scales. We also present investigations intoatomic-level design factors such as dopant positioning and concentration.

Simulations of gated Si nanowires and 3-nm junctionless transistors