English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

International audienceElectronic properties of the Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure grown by molecular beam epitaxy are investigated. We measure by means of x-ray photoemission spectroscopy, photoluminescence, and Hall effect measurements the key parameters involved in the achievement of a high speed and very low power consumption field effect transistor: conduction and valence band offsets, energy gaps of channel and barrier materials, electron effective mass, and density of states in the channel. We observe the influence of the quantum well thickness on the electron Hall mobility and sheet carrier density. A type I heterostructure exhibiting a room temperature electron mobility of 25 000 cm2 V-1 s-1 with a sheet carrier density of 1.5×1012 cm-2 is demonstrated for the widest channel. We show that the thickness of the channel influences both Hall density and mobility through a multisubband occupancy. We discuss about the scattering mechanisms limiting the mobility in the second subband

Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure