English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Resonant microwave-assisted and DC transport are investigated in degeneratelydoped silicon single electron transistors. A model based on hopping vialocalized impurity states is developed and first used to explain both the DCtemperature dependence and the AC response. In particular, the non-monotonicpower dependence of the resonant current under irradiation is proved to beconsistent with spatial Rabi oscillations between these localized states.

Microwave-assisted transport via localized states in degenerately doped Si single electron transistors