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The electrical characteristics, in particular interface trap densities, oxide capacitance, and Fermi level movement, of metal oxide semiconductor capacitors with HfO2 gate dielectrics and In0.53Ga0.47As channels are investigated as a function of postdeposition annealing atmosphere. It is shown, using both conductance and Terman methods, that the Fermi level of nitrogen annealed stacks is effectively pinned at midgap. In contrast, samples annealed in forming gas show a large band bending in response to an applied gate voltage and a reduced midgap interface trap density compared to those annealed in nitrogen.

Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks