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We present numerical evidence of a novel propagation mode for superfastimpact ionization fronts in high-voltage Si $p^+$-$n$-$n^+$ structures. Innonlinear dynamics terms, this mode corresponds to a pulled front propagatinginto an unstable state in the regime of nonlocalized initial conditions. Beforethe front starts to travel, field-ehanced emission of electrons from deep-levelimpurities preionizes initially depleted $n$ base creating spatially nonuniformfree carriers profile. Impact ionization takes place in the whole high-fieldregion. We find two ionizing fronts that propagate in opposite directions withvelocities up to 10 times higher than the saturated drift velocity.

Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization