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Cd{sub 0.46}Zn{sub 0.04}Te{sub .50} crystals have been exposed to high density Ar plasmas in order to modify the surface chemistry and control the surface conductivity. X-ray photoelectron spectroscopy (XPS) reveals that this bombardment results in a modified surface atomic ratio, with Cd being preferentially removed compared to Te. In addition, the native oxide is removed and suppressed for an extended period of time. Current-voltage data is analyzed in order to determine the effect on surface leakage current after exposure. It is found that surface leakage current can be decreased by approximately 2.5 orders of magnitude following Ar{sup +} bombardment.

Surface current reduction in (211) oriented Cd0.46Zn0.04Te.50 crystals by Ar bombardment