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Molecular‐beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good electrical characteristics. The samples are all n type with electron concentrations varying in the range (3–9)×1015 cm−3. The mobilities are high (70 000 and 110 000 cm2/V s at 300 and 77 K, respectively) in InSb and the alloys. More importantly, the mobilities remain high at the low temperatures in the alloys also, without any type conversion. The mobility data have been analyzed taking into account the appropriate scattering mechanisms. The alloy scattering potential in InAs0.24 Sb0.76 is estimated to be 0.3 V

Transport properties of InAsxSb1−x (0≤x≤0.55) on InP grown by molecular-beam epitaxy