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Titanium silicide islands have been formed by the ultrahigh vacuum depositionof thin films of titanium (< 2 nm) on atomically clean Si(100) substratesfollowed by annealing to ~800 degrees C. Scanning tunneling microscopy (STM)and scanning tunneling spectroscopy have been performed on these islands torecord current-voltage (I-V) curves. Because each island forms a double barriertunnel junction (DBTJ) structure with the STM tip and the substrate, they wouldbe expected to exhibit single electron tunneling (SET) according to theorthodox model of SET. Some of the islands formed are small enough (diameter <10 nm) to exhibit SET at room temperature and evidence of SET has beenidentified in some of the I-V curves recorded from these small islands. Thosecurves are analyzed within the framework of the orthodox model and are found tobe consistent with that model, except for slight discrepancies of the shape ofthe I-V curves at current steps. However, most islands that were expected toexhibit SET did not do so, and the reasons for the absence of observable SETare evaluated. The most likely reasons for the absence of SET are determined tobe a wide depletion region in the substrate and Schottky barrier lowering dueto Fermi level pinning by surface states of the clean silicon near the islands.The results establish that although the Schottky barrier can act as aneffective tunnel junction in a DBTJ structure, the islands may be unreliable infuture nanoelectronic devices. Therefore, methods are discussed to improve thereliability of future devices.

Titanium Silicide Islands on Atomically Clean Si(100): Identifying Single Electron Tunneling Effects