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We report the growth of potassium-doped BaFe2As2 thin films, where the majorcharge carriers are holes, on Al2O3 (0001) and LaAlO3 (001) substrates by usingan ex-situ pulsed laser deposition technique. The measured Tc's are 40 and 39 Kfor the films grown on Al2O3 and LaAlO3, respectively and diamagnetismindicates that the films have good bulk superconducting properties below 36 and30 K, respectively. The X-ray diffraction patterns for both films indicated apreferred c-axis orientation, regardless of the substrate structures of LaAlO3and Al2O3. The upper critical field at zero temperature was estimated to beabout 155 T.

Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K