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Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch inepitaxial magnetic tunnel junctions with MgO barriers, notably suppresses bothnonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhancestunnelling magnetoresistance (TMR). A comparative study of the room temperatureelectron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVxMTJs with 0 <= x <= 0.25 reveals that V doping of the bottom electrode for x <0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic andmagnetic 1/f noise. We attribute the enhanced TMR and suppressed 1/f noise tostrongly reduced misfit and dislocation density.

Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions