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Using the metal-insulator transition that takes place as a function ofcarrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have beenfabricated with room-temperature breakdown voltages of up to 200 V. Withapplied voltage, the capacitance of the diodes changes by a factor of 150. Thediodes are robust and operate at temperatures up to 270 C.

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces