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We have investigated the generation and propagation of misfit dislocations in strained InyGa1−yAs/GaAs multiquantum wells grown by molecular‐beam epitaxy, with cross‐sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 Å, being characterized by excitonic linewidths and Stokes shifts of 1.5–2.5 and 1–2 meV, respectively. We have examined the growth of 2‐μm‐thick multiquantum‐well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y=0.07) and large (y=0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low‐temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post‐growth thermal annealing. In the case of quantum wells with large misfits directly grown on GaAs, dislocations are generated within the first few periods, and high optical quality is retained in the subsequent free‐standing quantum wells. In the case of quantum wells grown with an intermediate composition InxGa1−xAs buffer layer, dislocations are generated at the buffer‐GaAs interface, and the freestanding multiquantum well is again of very high quality

Transmission electron microscopy of strained InyGa1−yAs/GaAs multiquantum wells: The generation of misfit dislocations