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The effect of uniform electric field on low temperature (T=0 K) multisubband electron mobility μi is analyzed by considering a barrier delta-doped Ga0.5In0.5P/GaAs coupled double quantum well structure. We consider ionized impurity scattering and interface roughness (IR) scattering. The screening of the scattering potentials is obtained by adopting the random phase approximation. Starting with a double-subband occupied system we have studied the changes in the intrasubband and intersubband scattering processes by varying the electric field F and highlight the influence of F on the intersubband effects which yields interesting results on μi. At a certain electric field, the system undergoes a transition from double subband to single subband occupancy leading to a large enhancement in mobility due to the suppression of the intersubband interactions. We show that by reversing the electric field a large change in mobility is obtained due to the asymmetric nature of the IR scattering potential. It is also grat...

Effect of electric field on low temperature multisubband electron mobility in a coupled Ga0.5In0.5P/GaAs quantum well structure