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The Monte Carlo approach is used to study the quasibound electron and hole ground‐state levels in a quantum well in the presence of a transverse electric field. A criteria is developed to ensure that the ground state is a true quasibound state. These techniques are applied to an Al0.3Ga0.7As/GaAs quantum well subjected to a high electric field perpendicular to the interfaces. Results on the electron and hole tunneling rates and their dependence on band‐edge discontinuities are presented. The variation of the ground‐state emission energy with the electric field is also presented

Theory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approach