English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We measure the temperature of a mesoscopic system consisting of anultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in ametal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by meansof the capture and emission of an electron in a point defect close to theinterface. Contrarily to previous reports, we show that the capture andemission by point defects in Si n-MOSFETs can be temperature dependent down to800 mK. As the finite quantum grand canonical ensemble model applies, the timedomain charge fluctuation in the defect is used to determine the temperature ofthe few electron gas in the channel.

Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics