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We investigate the transport properties of double-gated bilayer graphenenanoribbons at room temperature. The devices were fabricated using conventionalCMOS-compatible processes. By analyzing the dependence of the resistance at thecharge neutrality point as a function of the electric field appliedperpendicular to the graphene surface, we show that a band gap in the densityof states opens, reaching an effective value of ~sim50 meV. This demonstratesthe potential of bilayer graphene as FET channel material in a conventionalCMOS environment.

Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature