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High purity epitaxial FeSe0.5Te0.5 thin films with different thickness weregrown by Pulsed Laser Ablation on different substrates. By varying the filmthickness, Tc up to 21K were observed, significantly larger than the bulkvalue. Structural analyses indicated that the a axis changes significantly withthe film thickness and is linearly related to the Tc. The latter resultindicates the important role of the compressive strain in enhancing Tc. Tc isalso related to both the Fe-(Se,Te) bond length and angle, suggesting thepossibility of further enhancement.

Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain